Inhouse product
IRFZ44 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 94 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Part Number | IRFZ44 |
Transistor Polarity | N-Channel |
Drain-Source Breakdown Voltage (Vds) | 55V |
Continuous Drain Current(Id) | 49A |
Drain Source Resistance (Rds on) | 0.0175 ohms |
Gate Source Voltage (Vgs) | 20V |
Power Dissipation | 94W |
Package Type | TO-220AB |
Country of Origin | China |
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